Our E band chipset is primarily aimed at the automotive radar applications with wide frequency ranges from 76-81GHz. When used with our patented monopulse Rotman lens, wide beam scanning radars can be designed with multiple target discrimination, high speed tracking and ultra-fine resolution both angular and range. Unlike silicon products, the GaAs substrate allows very low noise and sufficient power to achieve radar ranges in excess of 300 metres.
The E Band range of MMICs are fabricated on 0.1um PHEMT GaAs process that optimises noise and power to give a high reliability, low noise and high-power chipset.
The range includes low noise amplifiers, power amplifiers, gain blocks and frequency multipliers. In addition, there are a range of mixers, IQ mixers and multi-path MMIC switches, all low loss and fabricated on a Schottky diode GaAS process.