Arralis, global leaders in building technology and products that are the future of global radar & wireless communications, today announced the launch of its new Leonis series GaN-SiC High Power Amplifier (HPA) optimised for satellite downlink communication systems. The HPA operates in K-band from 17.5GHz-20GHz and delivers a saturated power in excess of 10W with typical power added efficiency of 25% and large signal gain of 20dB in a compact die size of 3.6×2.9mm. The part is matched to 50Ω with integrated DC blocking capacitors on RF ports and incorporates an output power detector to assist with system integration. Nominal drain bias is 25V.

The HPA is fabricated on ITAR free, space qualified UMS 0.25um GH25-10 GaN-SiC process. GaN devices have higher efficiencies, power density and thermal conductivity compared to equivalent GaAs parts, and can operate at higher temperatures without loss of reliability. Optimum performance has been achieved at K-band through a combination of UMS device models, NI AWR EDA software and the design expertise of the Arralis MMIC team.

“The addition of this latest HPA to Arralis’ suite of devices builds on our high-performance K/Ka-band Leonis chipset, forming the final link in the RF power chain and delivering 10W of saturated output power in a compact GaN MMIC” said Thomas Young, Senior MMIC Design Engineer, Arralis. “The new GaN HPA exemplifies the design and application expertise that Arralis provides across a range of mm-wave bands. The data-hungry society of today demands constant, uninterrupted access to information, and this demand will increase in the future. Global connectivity takes a step closer to realisation through the development of this enabling technology for K/Ka Band Satellite Comms”.

The Leonis chipset was developed to meet the needs of the growing […]